Transistor: N-MOSFET; SiC; unipolar

Multiples: 1.0
Minimum quantity: 1.0
Product code: S2M0160120T
Manufacturer: SMC DIODE SOLUTIONS
Manufacturer code: S2M0160120T
  • Mounting
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

4.02 € 4.02 € (wo VAT) 4.0200000000000005 EUR

4.02 €

This combination does not exist.

Add to Cart

Specification for Transistor: N-MOSFET; SiC; unipolar

Mounting SMD
Kind of package reel, tape
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices Kelvin terminal
Technology SiC
Drain-source voltage 1.2kV
Drain current 12A
Pulsed drain current 40A
Power dissipation 121W
On-state resistance 300mΩ
Gate charge 26.5nC