Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: LGE3M160120B
    Manufacturer: LUGUANG ELECTRONIC
    Manufacturer code: LGE3M160120B
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 48A; 134W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 14A
    Pulsed drain current 48A
    Power dissipation 134W
    On-state resistance 0.285Ω
    Gate charge 43nC