Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W; ISOPLUS i4-pac™

    Multiples: 300.0
    Minimum quantity: 300.0
    Product code: IXBF20N360
    Manufacturer: IXYS
    Manufacturer code: IXBF20N360
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: IGBT; BiMOSFET™; 3.6kV; 20A; 230W; ISOPLUS i4-pac™

    Mounting THT
    Case ISOPLUS i4-pac™ x024c
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Power dissipation 230W
    Gate-emitter voltage ±20V
    Pulsed collector current 220A
    Collector current 20A
    Gate charge 110nC
    Collector-emitter voltage 3.6kV