Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXA30RG1200DHGLB
Manufacturer: IXYS
Manufacturer code: IXA30RG1200DHGLB
  • Case
  • Electrical mounting
  • Semiconductor structure
  • Max. off-state voltage
  • Technology
  • Technology
  • Type of module
  • Power dissipation
  • Gate-emitter voltage
  • Pulsed collector current
  • Topology
  • Collector current

12.44 € 12.44 € (wo VAT) 12.44 EUR

12.44 €

This combination does not exist.

Add to Cart

Product downloads

Specification for Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT

Case SMPD-B
Electrical mounting SMT
Semiconductor structure diode/transistor
Max. off-state voltage 1.2kV
Technology ISOPLUS™, Sonic FRD™
Type of module IGBT
Power dissipation 147W
Gate-emitter voltage ±20V
Pulsed collector current 75A
Topology boost chopper
Collector current 30A