Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: SGT120R65AL
    Tootja: STMicroelectronics
    Tootja tootekood: SGT120R65AL
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W

    Mounting SMD
    Case PowerFLAT 5x6
    Kind of package tape
    Polarisation unipolar
    Type of transistor N-JFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology GaN
    Drain-source voltage 650V
    Drain current 9A
    Pulsed drain current 36A
    Power dissipation 192W
    On-state resistance 120mΩ
    Gate charge 3nC