Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: MMIX1T600N04T2
    Tootja: IXYS
    Tootja tootekood: MMIX1T600N04T2
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    37,69 € 37,69 € (KM-TA) 37.69 EUR

    37,69 €

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    Spetsifikatsioon tootele Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W

    Mounting SMD
    Case SMPD
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology GigaMOS™, TrenchT2™
    Drain-source voltage 40V
    Drain current 600A
    Pulsed drain current 2kA
    Power dissipation 830W
    On-state resistance 1.3mΩ
    Reverse recovery time 100ns
    Gate charge 590nC