Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXA20RG1200DHGLB
    Tootja: IXYS
    Tootja tootekood: IXA20RG1200DHGLB
    • Case
    • Electrical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Technology
    • Technology
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Collector current

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    Spetsifikatsioon tootele Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT

    Case SMPD-B
    Electrical mounting SMT
    Semiconductor structure diode/transistor
    Max. off-state voltage 1.2kV
    Technology ISOPLUS™, Sonic FRD™
    Power dissipation 125W
    Gate-emitter voltage ±20V
    Pulsed collector current 45A
    Topology boost chopper
    Collector current 23A