Dual MOSFET, N Channel, 24 V, 11 A, 0.007 ohm, SOT-28FL, Surface Mount

• Mounting SMD
• Case ECH8
• Kind of package reel
• Kind of package tape
• Polarisation unipolar
• Semiconductor structure common drain
• Type of transistor N-MOSFET x2
• Kind of channel enhanced
• Number of pins 8
• Features of semiconductor devices ESD protected gate
• Drain-source voltage 24V
• Application charging control
• Drain current 11A
• Pulsed drain current 60A
• Power dissipation 1.4W
• On-state resistance 9.1mΩ
• Gate charge 10nC
• Max operating temperature 150°C

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