Transistor: N-MOSFET

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SIR186LDP-T1-RE3
    Manufacturer: VISHAY
    Manufacturer code: SIR186LDP-T1-RE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    2.13 € 2.13 € (wo VAT) 2.13 EUR

    2.13 €

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    Specification for Transistor: N-MOSFET

    Mounting SMD
    Case PowerPAK® SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage 60V
    Pulsed drain current 150A
    Power dissipation 57W
    On-state resistance 6.3mΩ
    Gate charge 48nC