Transistor: N/P-MOSFET

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI1016CX-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI1016CX-T1-GE3
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge
    • Kind of transistor

    0.74 € 0.74 € (wo VAT) 0.74 EUR

    0.74 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N/P-MOSFET

    Mounting SMD
    Case SC89, SOT563
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N/P-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Technology TrenchFET®
    Drain-source voltage 20/-20V
    Pulsed drain current 2A
    Power dissipation 140mW
    On-state resistance 396/756mΩ
    Gate charge 2/2.5nC
    Kind of transistor complementary