Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: NSF080120L3A0Q
    Manufacturer: NEXPERIA
    Manufacturer code: NSF080120L3A0Q
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    16.62 € 16.62 € (wo VAT) 16.62 EUR

    16.62 €

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 25A
    Pulsed drain current 80A
    Power dissipation 183W
    On-state resistance 120mΩ
    Gate charge 52nC