Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: NSF040120L3A0Q
    Manufacturer: NEXPERIA
    Manufacturer code: NSF040120L3A0Q
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    23.83 € 23.83 € (wo VAT) 23.830000000000002 EUR

    23.83 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 46A
    Pulsed drain current 160A
    Power dissipation 313W
    On-state resistance 60mΩ
    Gate charge 95nC