Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: MMIX1T550N055T2
    Manufacturer: IXYS
    Manufacturer code: MMIX1T550N055T2
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    49.41 € 49.41 € (wo VAT) 49.410000000000004 EUR

    49.41 €

    This combination does not exist.

    Add to Cart

    Specification for Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W

    Mounting SMD
    Case SMPD
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology GigaMOS™, TrenchT2™
    Drain-source voltage 55V
    Drain current 550A
    Pulsed drain current 2kA
    Power dissipation 830W
    On-state resistance 1.3mΩ
    Reverse recovery time 100ns
    Gate charge 595nC