Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: LGE3M45170B
    Manufacturer: LUGUANG ELECTRONIC
    Manufacturer code: LGE3M45170B
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.7kV
    Drain current 48A
    Pulsed drain current 160A
    Power dissipation 520W
    On-state resistance 90mΩ
    Gate charge 54nC