Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: LGE3M40065Q
    Manufacturer: LUGUANG ELECTRONIC
    Manufacturer code: LGE3M40065Q
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • On-state resistance

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W

    Mounting THT
    Case TO247-4
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 650V
    Drain current 58A
    Pulsed drain current 180A
    On-state resistance 55mΩ