Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXTA3N150HV
Manufacturer: IXYS
Manufacturer code: IXTA3N150HV
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Drain-source voltage
  • Drain current
  • Power dissipation
  • Reverse recovery time
  • Gate charge

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Specification for Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns

Mounting SMD
Case TO263
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices standard power mosfet
Drain-source voltage 1.5kV
Drain current 3A
Power dissipation 250W
Reverse recovery time 900ns
Gate charge 38.6nC