Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFP4N60P3
    Manufacturer: IXYS
    Manufacturer code: IXFP4N60P3
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate-source voltage
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W

    Mounting THT
    Case TO220
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology HiPerFET™, Polar3™
    Drain-source voltage 600V
    Drain current 4A
    Pulsed drain current 8A
    Power dissipation 114W
    On-state resistance 2.4Ω
    Gate-source voltage ±30V
    Reverse recovery time 250ns
    Gate charge 6.9nC