Transistor: N-MOSFET; Polar3™; unipolar; 500V; 8A; Idm: 20A; 180W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFA8N50P3
    Manufacturer: IXYS
    Manufacturer code: IXFA8N50P3
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate-source voltage
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; Polar3™; unipolar; 500V; 8A; Idm: 20A; 180W

    Mounting SMD
    Case TO263
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology HiPerFET™, Polar3™
    Drain-source voltage 500V
    Drain current 8A
    Pulsed drain current 20A
    Power dissipation 180W
    On-state resistance 800mΩ
    Gate-source voltage ±30V
    Reverse recovery time 250ns
    Gate charge 13nC