Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXBH42N170A
    Manufacturer: IXYS
    Manufacturer code: IXBH42N170A
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

    28.67 € 28.67 € (wo VAT) 28.67 EUR

    28.67 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: IGBT; BiMOSFET™; 1.7kV; 21A; 357W; TO247-3

    Mounting THT
    Case TO247-3
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 33ns
    Power dissipation 357W
    Gate-emitter voltage ±20V
    Pulsed collector current 265A
    Collector current 21A
    Gate charge 188nC
    Collector-emitter voltage 1.7kV
    Turn-off time 308ns