Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXBA16N170AHV
    Manufacturer: IXYS
    Manufacturer code: IXBA16N170AHV
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

    27.83 € 27.83 € (wo VAT) 27.830000000000002 EUR

    27.83 €

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    Specification for Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO263

    Mounting SMD
    Case TO263
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 43ns
    Power dissipation 150W
    Gate-emitter voltage ±20V
    Pulsed collector current 40A
    Collector current 10A
    Gate charge 65nC
    Collector-emitter voltage 1.7kV
    Turn-off time 370ns