Transistor: N-MOSFET; unipolar; 60V; 90A; 115W; PG-TO252-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPD048N06L3GBTMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPD048N06L3GBTMA1
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate-source voltage

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    Specification for Transistor: N-MOSFET; unipolar; 60V; 90A; 115W; PG-TO252-3

    Mounting SMD
    Case PG-TO252-3
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology OptiMOS™ 3
    Drain-source voltage 60V
    Drain current 90A
    Power dissipation 115W
    On-state resistance 4.8mΩ
    Gate-source voltage ±20V