Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: ECH8695R-TL-W
    Manufacturer: ONSEMI
    Manufacturer code: ECH8695R-TL-W
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Semiconductor structure
    • Type of transistor
    • Kind of channel
    • Number of pins
    • Features of semiconductor devices
    • Drain-source voltage
    • Application
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge
    • Max operating temperature

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    Specification for Transistor: N-MOSFET x2; unipolar; 24V; 11A; Idm: 60A; 1.4W; ECH8

    Mounting SMD
    Case ECH8
    Kind of package reel, tape
    Polarisation unipolar
    Semiconductor structure common drain
    Type of transistor N-MOSFET x2
    Kind of channel enhanced
    Number of pins 8
    Features of semiconductor devices ESD protected gate
    Drain-source voltage 24V
    Application charging control
    Drain current 11A
    Pulsed drain current 60A
    Power dissipation 1.4W
    On-state resistance 9.1mΩ
    Gate charge 10nC
    Max operating temperature 150°C