Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: VS-GT300YH120N
    Tootja: VISHAY
    Tootja tootekood: VS-GT300YH120N
    • Electrical mounting
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Technology
    • Type of module
    • Gate-emitter voltage
    • Collector current

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    Spetsifikatsioon tootele Module: IGBT; diode/transistor; Urmax: 1.2kV; Ic: 300A; Trench

    Electrical mounting FASTON connectors, screw
    Mechanical mounting screw
    Semiconductor structure diode/transistor
    Max. off-state voltage 1.2kV
    Technology Trench
    Type of module IGBT
    Gate-emitter voltage ±20V
    Collector current 300A