Dual MOSFET, Complementary N and P Channel, 100 V, 6 A, 0.085 ohm, MLP, Surface Mount

• Mounting SMD
• Case WDFN12
• Kind of package reel
• Kind of package tape
• Polarisation unipolar
• Semiconductor structure common drain
• Type of transistor N/P-MOSFET x2
• Kind of channel enhanced
• Features of semiconductor devices MOSFET H-Bridge
• Drain current 6/-6A
• Power dissipation 2.5W
• Max operating temperature 150°C

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