Module; SiC diode/transistor; 1.2kV; 23A; Ugs: ±30V; Idm: 195A; 657W
Kordarv:
1.0
Minimum quantity:
12.0
Tootekood:
APTM120DA30CT1G
Tootja: MICROCHIP TECHNOLOGY
Tootja tootekood: APTM120DA30CT1G
Spetsifikatsioon tootele Module; SiC diode/transistor; 1.2kV; 23A; Ugs: ±30V; Idm: 195A; 657W
Case | SP1 |
Electrical mounting | Press-in PCB |
Mechanical mounting | screw |
Technology | POWER MOS 8®, SiC |
Type of module | transistor |
Drain-source voltage | 1.2kV |
Drain current | 23A |
Pulsed drain current | 195A |
Power dissipation | 657W |
On-state resistance | 360mΩ |
Topology | boost chopper, NTC thermistor |