Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI2319DS-T1-E3
    Manufacturer: VISHAY
    Manufacturer code: SI2319DS-T1-E3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    1.76 € 1.76 € (wo VAT) 1.76 EUR

    1.76 €

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    Specification for Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -2.4A; Idm: -12A

    Mounting SMD
    Case SOT23
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage -40V
    Drain current -2.4A
    Pulsed drain current -12A
    Power dissipation 800mW
    On-state resistance 130mΩ
    Gate charge 17nC