Transistor: N-MOSFET

    Multiples: 1.0
    Minimum quantity: 3.0
    Product code: RQ3E120GNTB
    Manufacturer: ROHM SEMICONDUCTOR
    Manufacturer code: RQ3E120GNTB
    • Mounting
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    0.51 €

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    Specification for Transistor: N-MOSFET

    Mounting SMD
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 30V
    Drain current 27A
    Pulsed drain current 48A
    Power dissipation 15W
    On-state resistance 13.8mΩ
    Gate charge 10nC