Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTQ130N20T
    Manufacturer: IXYS
    Manufacturer code: IXTQ130N20T
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    11.97 € 11.97 € (wo VAT) 11.97 EUR

    11.97 €

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    Specification for Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W

    Mounting THT
    Case TO3P
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices thrench gate power mosfet
    Technology Trench™
    Drain-source voltage 200V
    Drain current 75A
    Pulsed drain current 320A
    Power dissipation 830W
    On-state resistance 16mΩ
    Reverse recovery time 150ns
    Gate charge 150nC