Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTH76P10T
    Manufacturer: IXYS
    Manufacturer code: IXTH76P10T
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    10.29 €

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    Specification for Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; 70ns

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchP™
    Drain-source voltage -100V
    Drain current -76A
    Power dissipation 298W
    On-state resistance 25mΩ
    Reverse recovery time 70ns
    Gate charge 197nC