Transistor: N-MOSFET; unipolar; 60V; 170mA; Idm: 0.9A; SOT23

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: 2N7002NXBKR
    Manufacturer: NEXPERIA
    Manufacturer code: 2N7002NXBKR
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 60V; 170mA; Idm: 0.9A; SOT23

    Mounting SMD
    Case SOT23, TO236AB
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Technology Trench
    Drain-source voltage 60V
    Drain current 170mA
    Power dissipation 310mW
    On-state resistance 5.7Ω
    Gate charge 1nC